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The Czochralski technique of pulling from the melt has been extensively used in the field of semiconductors. The criteria for its applicability are discussed and indicate that this technique should also be applicable to some of the high‐melting ceramic oxides and oxide compounds. In addition to the successful growth of large crystals of calcium tungstate, preliminary experiments were performed on several other oxides. A number of materials including ferrites, rutile, and barium titanate have been grown in single‐crystal form, and growth conditions are described. Crucible material and atmosphere control problems are also discussed.
Nassau et al. (1962) studied this question.