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An insight analysis of In0. 7Ga0. 3N based pn homo-junction solar cell structure has been carried out using simulation software. A novel solar cell structure of n+ buffer contact layer/n window layer/p absorber layer/p+ back absorber layer has been proposed after device optimization. We have found that under the sun spectrum of AM 1. 5 of 1 KW/m2 operating at 300 K, the solar cell with low series resistance of 3 Ω cm2, highly doped (1×1019 cm–3) n+ layer as buffer contact layer and p+ layer of 200 nm thick as back absorber layer on top of back metal contact, enable us to achieve an efficient solar cell. We found that doping concentration of 1 {10^{16}} c{{m}^{ - 3}} in both active n and p layer, with 30 nm and 1. 0 { m} of thickness, respectively, would allow us to achieve short circuit current density of 35{{ mA} / {{{mA {c{{m}^2}}}}. -0em} {c{{m}^2}}}, open circuit voltage of 1. 0 V, overall efficiency of 28. 32% and fill factor value of 80% from the solar cell. If we could further reduce the series resistance of In0. 7Ga0. 3N pn homo-junction solar cell to ideal one, it may allow us to have even higher overall efficiency and fill factor values of 31 and 86%, respectively.
Rahman et al. (Fri,) studied this question.