Abstract Nanometrology is a cornerstone of modern manufacturing and pivotal in enabling precise measurements as well as materials characterization at the micro‐ and nano‐scale. The perspective delves into the essential contributions of nanometrology to advancing the frontiers of high‐tech manufacturing, with a particular focus on quality control of diverse material assemblies and hybridization. The cutting‐edge contribution of nanometrology to the Internet of Things (IoT) technology is associated with the meticulous development of miniaturized devices. An outlook on a diverse toolkit of nanometrology techniques tailored to the unique challenges of the micro‐ and nano‐scale realm of miniaturized devices is provided. The assessment of novel scanning, sensor, and probing techniques generate valuable insights into measuring nanoscale device dimensions, architectures, composition, and properties while reducing the influence of measurement distortions, noise, and high‐aspect ratios. Furthermore, interested readers are guided through methods applicable for field‐effect transistors (FET), including junction (JFET) or insulated gate (IGFET), n‐ or p‐type metal‐oxide‐semiconductor field‐effect (n/p‐MOSFET), metal‐insulator‐semiconductor field‐effect (MISFET), novel complementary metal‐oxide‐semiconductor field‐effect transistors (CMOSFET), as well as magnetoelectric (ME) micro‐ and nanoelectromechanical systems (ME M/NEMS). It is anticipated that the perspective will also boost innovation in developing micro‐ and nano‐scale integration of ME materials with CMOS. In this regard, nanometrology will revolutionize advanced manufacturing of miniaturized devices by ensuring their quality, thus propelling industries toward unprecedented levels of precision, repeatability, and efficiency to meet the ultimate goal of far‐field very‐low‐frequency (VLF) communication in IoT with minimal energy consumption, low power loss, and outstanding multifunctionality/versatility.
Chandel et al. (2025) studied this question.