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In this work, we report on high-quality -Ga2O3 epilayers on sapphire substrates by molecular beam epitaxy (MBE) using ozone and oxygen plasma precursors, respectively. A systematic examination of the surface morphology, nucleation process, and epilayer compositions of the -Ga2O3 epilayers is conducted to elucidate the impact of ozone and oxygen plasma precursors on the growth mechanism. Compared to -Ga2O3 epilayers using ozone precursor, which exhibit a Volmer–Weber growth mode with early stage nucleation gaps, the epilayers using oxygen plasma show a Stranski–Krastanow (S–K) growth mode under the modification of the oxygen plasma. In addition, metal–semiconductor–metal solar-blind photodetectors (PDs) are then constructed using the optimized -Ga2O3 epilayers. The oxygen plasma-grown -Ga2O3 PDs display a dark current of 3. 2 nA, a photo-dark current ratio (PDCR) of 2. 98 10^4, and a specific detectivity of 6. 51 10^{13} Jones, while the ozone-grown -Ga2O3 PDs manifest a low dark current of 7. 5 pA, a higher PDCR of 1. 31 10^{7}, and a higher specific detectivity of 1. 31 10^{15} Jones at 10 V, which originate from the lower oxygen vacancy in ozone-grown -Ga ₂~O₃ epilayers. This work reveals the heteroepitaxial growth mechanism of -Ga2O3 on sapphire by MBE, offering a facile, cheap, and effective approach for high-performance and large-area solar-blind PDs.
Tian et al. (2024) studied this question.