Sb2Te3/MoS2 heterojunction photodetector for broadband light detection ranging from visible to near-infrared wavelengths

Here, we demonstrate how low-dimensional materials can revolutionize photodetector and electro-optic modulator performance by adjusting critical properties such as bandgap, work function, and electron mobility. Utilizing scaling-length theory, we detail our progress in creating photodetectors with high gain-bandwidth products, including the integration of a metallic slot in a silicon photonic waveguide to improve carrier-lifetime-to-transit-time ratios. We also unveil a zero-bias operable 2D material PN junction photodetector that significantly reduces dark currents, enhancing noise-equivalent power performance. Additionally, our findings explore the compatibility of these advances with flexible substrates, potentially integrating them into Photonic Integrated Circuits (PICs) for compact, efficient, and integrated devices. This work not only aligns with current nanophotonic trends and wearable technology but also aims to redefine optoelectronic device efficiency for the next generation of PICs.