Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit

This article focuses on the design of a 650 V/150 A gallium nitride (GaN) power module. Direct bonded copper (DBC) is employed for the thermal pad insulation and the printed circuit board (PCB) is adopted for the flux cancellation, isolated bias power supply, and gate-drive-circuit integration. The packaged module exhibits high current capability (>150 A), high compactness (45 339. 6 mm3), and excellent thermal resistance (0. 43 °C/W). The insulated drain–source and integrated isolated gate-drive circuit also facilitate the assembly of GaN devices, particularly in high-power applications. Double pulse test (DPT) at 450 V/150 A shows ~50 V voltage spike only, which makes the proposed module well suited for high-power applications.