PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
February 9, 2024IEEE Electron Device Letters33 citations

Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths

View Full Paper
JZJun ZhangJXJin‐Xu XuCYCong Yao

Key Points

Key points are not available for this paper at this time.

Abstract

In this letter, a miniaturized bandpass filter chip is designed and implemented on high-resistivity-silicon (HRS) integrated passive device (IPD) technology. The filter is designed into a three-path topology, which can generate multiple transmission zeros to achieve a high roll-off rate at the passband edge and good rejection in a very wide stopband. For validation, the filter chip operating at 5G N77 frequency band is fabricated with a compact size of 1. 10. 7 mm2 on IPD technology. Measured results show an in-band insertion loss of smaller than 1. 7 dB and a wide stopband from 5. 39 to 31. 5 GHz.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Zhang et al. (2024) studied this question.

synapsesocial.com/papers/68e7a2cdb6db64358770ba26https://doi.org/10.1109/led.2024.3364692
Ask AI
Helpful
Bookmark
Share
View Full Paper