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January 1, 2025Радиотехника и электроника / Journal of Communications Technology and Electronics0 citations

THIN FILM FORMATION DURING THE Au THERMAL VACUUM EVAPORATION AT THE (100) GaAs SUBSTRATE SURFACE

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TBT.A. Bryantseva

Key Points

  • Formation of a thin film occurs during thermal vacuum evaporation on gallium arsenide.
  • Islands with hexagonal lattice structure were observed on the substrate.
  • Investigation includes the influence of manufacturing conditions on device efficacy.
  • Applications in microwave devices are discussed within the context of gold-gallium arsenide contacts.

Abstract

The processes of formation of thin gold films on the surface substrate of gallium arsenide during evaporation in vacuum are investigated. The formation of gallium arsenide islands with a hexagonal lattice structure is detected. The influence of the conditions of manufacturing Au-GaAs contacts on the possibility of their use in microwave devices is discussed.

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Cite This Study

T.A. Bryantseva (2025) studied this question.

synapsesocial.com/papers/6925572cc0ce034ddc35a78chttps://doi.org/10.7868/s3034590125070089
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Also Consider

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  1. 1Effects of As8 structure formation on the surface morphology and internal microstructure of GaAs thin films2024
  2. 2Controlled Formation of Nanoislands During Microwave Annealing of Au Thin Films2025
  3. 3Observation of gallium droplets directly formed on GaAs substrate by in-situ laser irradiation2024
  4. 4(111)A-, (411)A-ORIENTED SUBSTRATES EFFICIENCY FOR LOW-TEMPERATURE EPITAXIAL GROWTH OF (In,Ga)As PHOTOCONDUCTIVE STRUCTURES USED IN TERAHERTZ PULSES GENERATION2025
  5. 5Formation of Gallium Nanocrystals on the Sapphire Substrates2026