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January 18, 2026Journal of Nonlinear Optical Physics & Materials0 citations

Nb 4 C 3 Tx Nanosheet-Based Modulator for Generating Mode-Locking Pulses

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YWYu WeiJWJiale WuWZWenfei Zhang

Key Points

  • The aim is to explore the performance of Nb4C3Tx as a saturable absorber in mode-locking applications.
  • Prepared high-purity Nb4C3Tx saturable absorber using an acid-etching method
  • Integrated the saturable absorber into an erbium-doped fiber laser
  • Captured traditional soliton and harmonic mode-locking operations at different pump powers
  • Achieved a modulation depth of 13.07% and saturation intensity of 1.62 MW/cm2
  • Obtained a traditional soliton central wavelength of 1563.89 nm at 6.70 MHz frequency
  • Successfully reached a harmonic mode-locking frequency of 421.4 MHz at 500 mW pump power
  • Highlighted the influence of functional groups on mode-locking performance

Abstract

This study successfully prepared high-purity Nb 4 C 3 Tx saturable absorber (SA) using an acid-etching method. The modulation depth is 13.07 %, with a saturation intensity of 1.62 MW/cm 2 , demonstrating significant nonlinear saturable absorption characteristics. The SA device was integrated into an erbium-doped fiber laser, where we successfully captured stable traditional soliton mode-locking and 59th–63rd order continuous harmonic modelocking (HML) operations. At a pump power of 203 mW, the traditional soliton has a central wavelength of 1563.89 nm and a repetition frequency of 6.70 MHz. At a pump power of 500 mW, the highest repetition frequency of the HML is 421.4 MHz. In addition, the data comparison reveals that the introduction of specific functional groups has a significant impact on the mode-locking performance. Experimental results indicate that Nb 4 C 3 Tx-SA exhibits excellent saturable absorption properties, providing a new modulation material for the development of high repetition frequency ultrafast fiber lasers.

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Cite This Study

Wei et al. (2026) studied this question.

synapsesocial.com/papers/696c7877eb60fb80d1396b10https://doi.org/10.1142/s0218863526500013
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