Abstract We report the molecular beam epitaxial growth and device applications of α-In 2 Se 3 thin films on hexagonal boron nitride ( h -BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In 2 Se 3 and h -BN, even though the α-In 2 Se 3 / h -BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In 2 Se 3 layers were examined by fabricating corresponding field-effect transistors and photodetectors. Graphical Abstract
Kim et al. (2026) studied this question.