Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

ABSTRACT Low power consumption has become an essential criterion in the development of next‐generation electronics, driven by the growing adoption of Internet of Things, wearables, and portable platforms. Oxide semiconductor thin‐film transistors (TFTs) have become most promising candidates for next‐generation low‐power electronics due to their wide band‐gap, low leakage current, high mobility, steep subthreshold swing, and compatibility with low‐temperature flexible processing. In this review, recent advances in the use of oxide TFTs for low‐power electronics are systematically summarized. First, the inherent advantages of oxide semiconductor materials over other commonly used materials (e.g., amorphous hydrogenated silicon, low temperature polycrystalline silicon, organic semiconductors, etc.) for realizing low power consumption are demonstrated. Then, strategies to reduce power consumption are further discussed, including interface engineering, such as the novel source‐gated transistors, and structural engineering, such as dual‐gate and underlap designs. Finally, a comprehensive review of oxide TFTs for various low‐power electronics applications, including logic circuits, active‐matrix arrays, flexible electronics, monolithic 3D integration, and neuromorphic computing, is presented, demonstrating their great potential in future low‐power and flexible electronic systems.