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January 25, 2026Modern Physics Letters B0 citations

Advanced properties of CoZrFeP Heusler compound: A spin-gapless semiconductor for thermoelectric and spintronic applications

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BBB. BelarbiMHM. HouariSMS. Mesbah

Key Points

  • To investigate the mechanical, thermoelectric, optical, and structural properties of CoZrFeP using density functional theory.
  • Utilized first-principles density functional theory (DFT) for property evaluations.
  • Conducted magnetic investigations to determine the spin-gapless semiconductor characteristics.
  • Assessed thermoelectric performance via Seebeck coefficient and transport coefficients.
  • Identified CoZrFeP as a spin-gapless semiconductor with a total magnetic moment of 2.0 µB per formula unit.
  • Demonstrated a high Curie temperature of 1482.46 K, indicating thermal stability.
  • Highlighted strong thermoelectric performance suitable for high-temperature applications.

Abstract

Employing first-principles density functional theory (DFT), we investigate the mechanical, thermoelectric, optical, and structural properties of the quaternary Heusler compound CoZrFeP. The magnetic investigation of CoZrFeP identifies it as a spin-gapless semiconductor (SGSC), exhibiting a total magnetic moment of 2.0Formula: see text Formula: see textB per formula unit. The spin-polarized projected density of states (PDOS) further confirms its SGSC characteristics, making it suitable for spintronic applications. The elevated Curie temperature of 1482.46Formula: see textK demonstrates its thermal stability. The thermoelectric performance, evaluated through the Seebeck coefficient and associated transport coefficients, highlights the compound’s suitability for high-temperature thermoelectric applications. Overall, CoZrFeP is a promising material for advanced spintronic devices and high-temperature thermoelectric applications.

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Cite This Study

Belarbi et al. (2026) studied this question.

synapsesocial.com/papers/6975b1a9feba4585c2d6d224https://doi.org/10.1142/s0217984926500338
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