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February 8, 2026Journal of the American Chemical Society3 citations

Visualizing Interfacial Charge Trapping in a Heterostructure of a Monolayer Metal–Organic Framework on a van der Waals Substrate

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HCH. M. ChenYCYuantao ChenSMSongyu Mo

Key Points

  • This research aims to investigate charge trapping and transfer properties in a 2D metal-organic framework for energy storage applications.
  • Synthesized monolayer Ni3(HAT)2 on a graphite substrate
  • Utilized scanning tunneling microscopy and spectroscopy for analysis
  • Conducted density functional theory calculations
  • Monolayer Ni3(HAT)2 shows an effective electron mass of approximately 0.18 me
  • Exhibits gapless density of states near the Fermi level
  • Charges can be trapped under the pores of Ni3(HAT)2 during charging at low voltage
  • Revealed a charge transfer of 0.18 e-/nm2 to the graphene substrate

Abstract

Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) have garnered significant attention for their potential applications in energy devices such as supercapacitors and batteries due to their high electrical conductivity and large surface area. In this study, we synthesize a single-layer 2D c-MOF, Ni3(HAT)2, on a van der Waals substrate of graphite, serving as a model system for a bilayer MOF-based supercapacitor. Employing scanning tunneling microscopy and spectroscopy (STM/S) and density functional theory analysis, we find that monolayer Ni3(HAT)2 retains its intrinsic structural and electronic properties, exhibiting an effective electron mass of approximately 0.18 me and gapless density of states near the Fermi level. Tunneling spectroscopy shows that the Ni3(HAT)2 monolayer undergoes charging and discharging at a voltage as low as 0.1 V in the tunnel junction. The DFT analysis reveals that the Ni3(HAT)2 monolayer transfers 0.18 e-/nm2 to a graphene substrate. We use STM/S to visualize that the substrate charges are trapped underneath the pores of Ni3(HAT)2. Our study sheds light on charge transfer and storage in a model system of MOF-based supercapacitor devices.

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Cite This Study

Chen et al. (2026) studied this question.

synapsesocial.com/papers/698828410fc35cd7a884791ahttps://doi.org/10.1021/jacs.5c17677
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