This investigation reveals enhanced ferroelectricity and nanoscale diode performance in ZrO2/Si structures, indicating potential for low-power applications.
Key Points
To examine ferroelectric properties and performance of ZrO2/Si heterostructures for use in Schottky diodes.
Investigation of three ZrO2-based heterostructures grown by atomic layer deposition (ALD) with thicknesses of 7–20 nm.
Evaluation of current-voltage characteristics at room temperature before and after rapid thermal annealing (RTA).
Comparison of metal-insulator-semiconductor and metal-insulator-metal diodes.
Nanoscale Schottky diodes showed optimal performance after RTA with 15 nm ZrO2 thickness.
MIS diodes achieved an ideality factor of 1.56 and a remanent polarization of 20.6 µC/cm².
The best MIM diodes (Pt/ZrO2/Pt) had an ideality factor of 2.03, a remanent polarization of 47.9 µC/cm², and leakage current between 10–50 fA.