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February 12, 2026Journal of Applied Physics0 citationsOpen Access

Charge and thermal transport in lateral non-local spin devices

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ISItaru SugiuraXFXin FanYKY. Kobayashi

Key Points

  • Examine the contribution of thermal and charge effects on spin transmission in non-local spin devices.
  • Developed a non-local spin device using single-crystalline NiO films.
  • Analyzed non-local voltage signals to assess spin transport mechanisms.
  • Investigated effects of Joule heating and charge current leakage on spin signals.
  • Non-local voltage signals were primarily influenced by charge current leakage and Joule heating.
  • Extraction of pure spin signals proved to be difficult due to non-spin contributions.

Abstract

Long-distance spin transmission is essential for spintronic devices. The spin transmission properties are often examined using lateral non-local spin devices. In this work, with the hope of a long-distance spin superfluid transmission, we devise a non-local spin device platform employing single-crystalline NiO films and the spin–orbit precession effect. We scrutinize the non-local voltage signals with possible contributions of spin transport, thermal transport, charge current leakage, and the Joule heating in mind. It is found that the non-local voltage signals in our device are dominated by non-spin contributions raised by a combination of the Joule heating and the charge current leakage, making extraction of spin signal challenging. Our findings are broadly relevant as the Joule heating is usually inevitable when a sufficient amount of spin current should be generated in such spin devices.

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Cite This Study

Sugiura et al. (2026) studied this question.

synapsesocial.com/papers/698d6eca5be6419ac0d54911https://doi.org/10.1063/5.0312595
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