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March 3, 2026npj 2D Materials and Applications0 citationsOpen Access

Hexagonal boron nitride: interlayer with atomic scale precision for interface engineering in functional materials and devices

JJJu-Hyun JungCKCheol-Joo e- Kim

Key Points

  • hBN interlayers enhance electronic and optoelectronic performance by controlling interactions at atomic scales, promoting advantageous states.
  • The strength of interactions regulated by hBN interlayers varies with material separation, allowing for tailored performance in devices.
  • Review assessment of recent advances in hexagonal boron nitride growth and integration techniques to modify material interfaces effectively.
  • Challenges remain that limit the widespread application of hBN, indicating a need for continued research and development in the field.

Abstract

Atomically thin hexagonal boron nitride (hBN) interlayers control interactions between electronic states of interfacing materials by modulating their separation at the atomic scale. These interlayers regulate interactions, whose strengths vary with distance. Here, we review how hBN is employed to enhance electronic and optoelectronic performance by mitigating disadvantageous interactions while preserving advantageous ones. Recent advances in hBN growth and integration are highlighted, and challenges that hinder widespread application are discussed.

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Cite This Study

Jung et al. (2026) studied this question.

synapsesocial.com/papers/69a759f8c6e9836116a1f65chttps://doi.org/10.1038/s41699-026-00664-7
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