In this study, a novel Cover-All Meandered Thick-copper (CAMT) interconnection design for 650 V GaN E-HEMT power modules was proposed and experimentally validated. The CAMT structure aims to reduce parasitic inductance and enhance thermal performance by replacing conventional bonding wires with a cover-all interconnection that leverages the unique top-layer metallization of GaN devices. Finite element analysis (FEA) simulations and experimental evaluations were conducted, including LCR meter measurements, double pulse tests, and thermal resistance extraction using optical fiber techniques, to verify the electrical and thermal benefits of the CAMT design. The results demonstrate that the CAMT interconnection reduces parasitic inductance by approximately ~9.7%, decreases switching overshoot voltage by ~11.1%, and improves thermal performance with a ~17.8% reduction in thermal resistance compared to conventional bonding wire connections. These findings verify that the proposed CAMT structure offers improved switching behavior, reduced parasitic-induced voltage overshoot, and enhanced thermal performance, indicating its strong potential as an interconnection solution for next-generation high-performance GaN power modules.
Seong et al. (2026) studied this question.