Organic memristors with tunable resistive switching (RS) are promising candidates for brain-inspired neuromorphic computing. This study reports a self-assembled organic nanowire network memristor based on copper (II) hexadecafluoro-phthalocyanine (F16CuPc), exhibiting digital, multilevel, and analog switching through compliance current (I CC) modulation. Current-voltage and impedance analyses reveal that the transition in RS behavior is primarily driven by a shift from trap-limited to trap-free space charge-limited conduction as I CC increases. In low I CC, Ag+-cation migration plays a central role in conduction through redox-assisted Ag-F/ Ag-π interwire interactions, causing abrupt switching. In contrast, higher allowed injection at high I CC enables predominant intrawire current conduction via π-π intermolecular interactions, resulting in a gradual RS transition. The novelty of this work lies in the controlled growth of nanowire structures via self-assembled 2D molecular stacking, which is key to enabling multifunctionality within a pristine, nanowire network-based molecular memristive system designed for hybrid digital-neuromorphic applications. These findings significantly broaden the functional scope of metal phthalocyanine-based nanowire network architecture, advancing their application toward flexible, energy-efficient, multifunctional, and wearable smart electronics.
Maity et al. (2026) studied this question.