Performance optimization of MFIS nanowire FeFET shows significant enhancements with the use of silicon/InAs materials for better electronic properties.
Key evidence indicates a notable improvement in parameters through TCAD simulation, highlighting the effective interaction between materials.
Assessment using TCAD simulation reveals detailed insights into the performance characteristics of the nanowire structures employed.
Highlights the importance of material selection in optimizing performance, paving the way for next-generation electronic devices.