This review systematically examines the hysteresis behavior of vanadium dioxide (VO2) during its metal-insulator transition (MIT), a fundamental characteristic that governs both the material's intrinsic physical properties and its performance in functional devices. The work comprehensively addresses the physical mechanisms underlying phase transition hysteresis, focusing on the interplay between Peierls lattice distortion and Mott electronic correlation that dictates hysteresis loop formation. It establishes quantitative characterization methods for key parameters, including transition temperature (Tc), amplitude (∆A), width (σ), sharpness (FWHM), and hysteresis width (ΔT). The review thoroughly analyzes various modulation strategies such as elemental doping, ion implantation, strain engineering, and electric field control, emphasizing their synergistic effects on transition properties while acknowledging the challenges in balancing coupled parameters. Furthermore, it explores the application potential of tailored hysteresis in functional devices, where moderate hysteresis enhances stability in smart windows and memory devices, while narrow hysteresis enables ultrafast switching. The discussion extends to current challenges in parameter decoupling and non-equilibrium dynamics, along with prospects in hysteresis engineering for advanced applications in smart optoelectronics, neuromorphic computing, and 6G communications, providing valuable theoretical guidance for both fundamental understanding and practical control of VO2's phase transition behavior.
Ya et al. (2026) studied this question.