ABSTRACT Moiré superlattices characterized by their atomic‐scale sliding ferroelectric (FE) ordering and tunable interfacial polarization properties have emerged as attractive building blocks for post‐Moore's law electronics. However, its topological protection from domain wall networks results in antiferroelectric (AFE) volatile characteristics, a fundamental obstacle to practical device applications. Here, utilizing twisted boron nitride as a model system, we propose a regulation strategy based on mechanical stress engineering, which drives a domain wall transition from Σ 0° to Σ 30° configurations. Through this approach, the applied stress breaks the balance between anti‐aligned dipoles and generates a double domain wall, therefore establishing a net out‐of‐plane polarization. Our approach achieves a phase transition from AFE to FE order, enabling stable nonvolatile polarization switching and paving the way for developing practical low‐power nonvolatile memory devices based on moiré platforms.
Fan et al. (2026) studied this question.