The paper studies the influence of indium content and heat treatment conditions on the phase composition, microstructure, and electrical properties of InGaZnO (x = 2, 2.5, 3.5) powders obtained by decomposition of nitrate-glycol gel. Annealing was carried out in the temperature range from 300 to 600◦C. Transmission and scanning electron microscopy confirmed the amorphous morphology of the materials in the annealing temperature range from 300 to 500◦C. Energy dispersive analysis revealed chemical homogeneity for these samples. However, at 500◦C, the greatest difference between the actual and expected compositions is observed. The lowest specific resistance is shown for the InGaZnO sample annealed at 500◦C, which is consistent with the literature data for amorphous powders. The results demonstrate the possibility of targeted control of the structure and conductivity of IGZO powders by optimizing the composition and temperature treatment, which makes them promising for practical application.
Zirnik et al. (2025) studied this question.