Measuring carrier mobility as a function of the carrier density in semiconductors using the Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostructures, the standard Hall geometry is not applicable, and the density dependence of mobility is generally inaccessible. Here, we present μ2T(n), a procedure allowing us to extract the density dependent mobility in two-terminal measured nano scale field effect transistors at zero magnetic field from conventional conductance vs gate voltage measurements. We validate μ2T against standard Hall measurements and then apply the procedure to 256 individual two-terminal InAs nanowire FETs, extracting information about the scattering mechanisms. To illustrate its broad utility, we reanalyze published data in which mobility had been treated as density independent. Our method represents a powerful tool for optimization and development of nanomaterials crucial for a wide range of technologies. Christian E. N. Petersen and colleagues propose a method to extract charge carrier density-dependent mobility from two-terminal measurements. The approach enables mobility analysis without the need for multi-terminal devices, simplifying nanowire characterization.
Petersen et al. (2026) studied this question.