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A low-noise high-frequency transresistance amplifier has been used to accurately measure broad-band noise in MOSFET's with small widths and submicrometer channel lengths. The technique allows noise characterization up to frequencies of 100 MHz of the small devices available as process test arrays from different fabrication lines. The noise in the different portions of the I-V characteristics of submicrometer MOSFET's has been characterized and shown to be greater by factors of 2 to 4 than the noise expected from long-channel noise theory.
A.A. Abidi (1986) studied this question.