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The effect of free holes on the optical phonons of Si at the zone center is investigated with Raman scattering. The presence of holes produces an inter-valence-band, electronic, broad, scattering background which overlaps with the one-phonon Raman line. This overlap results in a Fano-type continuous-discrete interference. The parameters and q of the resulting Fano scattering line can be varied by changing (a) the laser wavelength and (b) the free-carrier concentration. A theoretical interpretation of these results based on the detailed valence-band structure of Si and on the resonant characteristics of the vibronic and electronic Raman scattering is presented. The effect of uniaxial stress on this composite Raman scattering of p-type Si is also investigated. At large stresses the electronic background disappears and the phonon lines recover the linewidths of the intrinsic material. The behavior in the intermediate-stress range is very similar to that reported for the acoustical phonons in the previous paper.
Cerdeira et al. (1973) studied this question.
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