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We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The ^29Si hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D₃₃ symmetry) defect (V-Si-V) ^0, while KUL3 is shown to be (V-Si-V) ^0 decorated with a hydrogen atom, (V-Si-V: H) ^0.
Edmonds et al. (2008) studied this question.