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December 1, 1982Applied Physics Letters170 citations

Temperature dependence of silicon Raman lines

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RTRaphael TsuJHJesús Hernández

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Abstract

The one-phonon and two-phonon Raman spectra have been measured in the temperature range 20–900 °C. The rate of decrease of the normalized frequencies with increase of temperature for the zone center, TO at L and TA at X, is 5.4×10−5/°C, while for TO at X and TA at L is lower, being 3.6×10−5/°C. We have also found that the relative intensity of Stokes and anti-Stokes components of the Γ-point optical phonon deviates significantly from the value involving only the phonon occupation number, particularly at high temperatures. The decrease of the Γ25′ phonon from 521 cm−1 at 20 °C to 493 cm−1 at 900 °C should provide an unambiguous determination of the surface temperature due to laser heating.

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Cite This Study

Tsu et al. (1982) studied this question.

synapsesocial.com/papers/69d7cddf61e2ce1627d18174https://doi.org/10.1063/1.93394
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