PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
August 19, 2005Physical Review B130 citationsOpen Access

Zitterbewegung and its effects on electrons in semiconductors

WZW. Zawadzki

Key Points

Key points are not available for this paper at this time.

Abstract

An analogy between the band structure of narrow gap semiconductors and the Dirac equation for relativistic electrons in vacuum is used to demonstrate that semiconductor electrons experience a Zitterbewegung (trembling motion). Its frequency is ₙE₆∕ and its amplitude is ₙ, where ₙ=∕m₀^*u corresponds to the Compton wavelength in vacuum (E₆ is the energy gap, m₀^* is the effective mass, and u1. 310^80. 3em{0ex}cm∕s). Once the electrons are described by a two-component spinor for a specific energy band there is no Zitterbewegung but the electrons should be treated as extended objects of size ₙ. The magnitude of ₙ in narrow gap semiconductors can be as large as 700. 3em{0ex}. Possible consequences of the above predictions are indicated.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

W. Zawadzki (2005) studied this question.

synapsesocial.com/papers/69d83d6152654bb436d18dfehttps://doi.org/10.1103/physrevb.72.085217
Ask AI
Helpful
Bookmark
Share
View Full Paper