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May 25, 2012Proceedings of the IEEE2,718 citations

Metal–Oxide RRAM

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HWH.-S. Philip WongHLHeng-Yuan LeeSYShimeng Yu

Key Points

  • This paper reviews recent advances in binary metal-oxide resistive switching random access memory, focusing on its applications and challenges.
  • Review of physical mechanisms and material properties of binary metal-oxide RRAM
  • Discussion on electrical characteristics and large-scale RRAM arrays
  • Analysis of issues including uniformity, endurance, retention, multibit operation, and scaling trends.
  • Identified key challenges such as uniformity and endurance in RRAM technology.
  • Highlighted advancements in material properties enhancing performance for nonvolatile memory applications.
  • Discussed trends and developments in large-scale RRAM arrays for improved memory efficiency.

Abstract

In this paper, recent progress of binary metal–oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal–oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

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Cite This Study

Wong et al. (2012) studied this question.

synapsesocial.com/papers/69d8d7f4183921ebcaae3dachttps://doi.org/10.1109/jproc.2012.2190369
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