To demonstrate and characterize stimulated, coherent visible light emission from alloyed gallium arsenide phosphide p-n junctions.
Synthesized gallium arsenide phosphide crystals with varying arsenic-to-phosphorus ratios to tune the semiconductor band gap into the visible spectrum.
Fabricated semiconductor p-n junction diodes and applied high-density forward-bias electrical currents at cryogenic temperatures.
Achieved coherent stimulated light emission in the visible red wavelength spectrum from gallium arsenide phosphide junctions.
Observed spectral line narrowing and threshold current behavior characteristic of laser oscillation rather than spontaneous luminescence.