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Abstract Spin–orbit torque (SOT) induced perpendicular magnetization switching in Pt 1‐x Gd x /Co/Al 2 O 3 heterostructure with x = 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in‐plane charge current flowing through the Pt 1‐x Gd x layer, field‐free current‐induced magnetization switching is observed for all nonzero x due to the existence of opposite spin Hall angles (θ SHA ) from Pt 1‐x Gd x alloys. Furthermore, the large θ SHA of about 0.27 is obtained in the optimal Pt 0.70 Gd 0.30 alloy films, which is about four times larger than that of the pure Pt. This work suggests a simple and scalable method for realizing field‐free SOT switching, and provides potential candidates of spin Hall materials that can be used to produce highly efficient SOTs.
Bekele et al. (2020) studied this question.