PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
April 24, 2026Journal of Materials Chemistry C1 citations

Modulation of oxygen vacancy filaments and crystal structure by thermal annealing for high-performance solution-processed HfZrO x resistive memory

View Full Paper
CHChih-Chieh HsuZQZi-Rong QiuXZXuan-Zhi Zhang

Key Points

  • Determine the effects of thermal annealing on the resistive switching properties of HfZrO-based memory devices.
  • Evaluated Ti/HZO/n+-Si memory devices with varying annealing temperatures (300 °C to 900 °C) for performance assessment.
  • Assessed the relationship between annealing conditions and oxygen vacancy modulation in HZO layers.
  • Found enhanced resistive switching performance correlating with optimal annealing temperatures.
  • Demonstrated a direct link between oxygen vacancy filament formation and crystal structure in HfZrO.

Abstract

This study demonstrates solution-processed Ti/HZO/n + -Si write-once-read-many-times (WORM) memory devices. By systematically evaluating HZO resistive switching (RS) layers annealed from 300 °C to 900 °C, we establish a direct correlation between...

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Hsu et al. (2026) studied this question.

synapsesocial.com/papers/69eb08ef553a5433e34b39cahttps://doi.org/10.1039/d6tc00849f
Ask AI
Helpful
Bookmark
Share
View Full Paper