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May 6, 2026Nano Letters0 citations

Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride

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KYKarin YamamuraXYXinyang YuCCChaohao Chen

Key Points

  • To investigate how mid-infrared excitation affects single-photon emitters in hexagonal boron nitride.
  • Explored interaction of mid-infrared excitation with single-photon emitters.
  • Demonstrated a reversible method for enhancing emission from blue single-photon emitters.
  • Utilized phonon-assisted recombination driven by defect-localized phonon modes.
  • Enhanced emission achieved through mid-infrared coexcitation.
  • Reversible modulation of carrier dynamics for quantum emitters demonstrated.
  • Unique feature not previously observed for defects in solids reported.

Abstract

Single-photon emitters (SPEs) are promising building blocks for practical devices in quantum technologies. Traditionally, these systems are excited using off-resonant visible light through their phonon transitions, yet this process remains poorly understood. Here, we explore the interaction of mid-infrared (MIR) excitation with the properties of SPEs in hexagonal boron nitride. Notably, we present a reversible, nondestructive method to enhance emission from blue SPEs using MIR coexcitation. By resonantly driving defect-localized in-plane infrared-active optical phonon modes near 7.3 μm, the MIR field modulates carrier dynamics through a phonon-assisted recombination.This unique feature, not observed previously for defects in solids, is a promising reservoir in a growing toolkit to modulate quantum emitters at room temperature for their use in practical quantum technologies.

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Cite This Study

Yamamura et al. (2026) studied this question.

synapsesocial.com/papers/69faa1eb04f884e66b532914https://doi.org/10.1021/acs.nanolett.6c01168
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