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July 18, 2011Applied Physics Letters360 citations

III-Nitride full-scale high-resolution microdisplays

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JDJacob DayTexas Tech UniversityJLJ. LiKunming University of Science and TechnologyDLDonald Y.C. LieTexas Tech University

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Abstract

We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (µLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to −100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between µLED arrays and Si CMOS (complementary metal–oxide–semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

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Day et al. (2011) studied this question.

synapsesocial.com/papers/69fadaeb0f3e3dd74db8581ehttps://doi.org/10.1063/1.3615679
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