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May 8, 2026Angewandte Chemie0 citations

Boron‐Locked Diaza‐Octagon Strategy for Constructing Multi‐Resonance Emitters Enabling Anti‐Quenching Narrowband OLEDs With High Efficiency and Low Efficiency Roll‐Off

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YQYadong QuSouth China University of TechnologyCXChenfa XiaoLumtec (Taiwan)BLBaoxi LiSouth China University of Technology

Key Points

  • The aim is to develop multi-resonance emitters with high external quantum efficiency and low efficiency roll-off for narrowband OLEDs.
  • Developed two emitters, 8NN-1B and 8NN-2B, using a diaza-octagon emitting core.
  • Regulated electronic effects and conformation to enhance spin-orbit coupling and reverse intersystem crossing rates.
  • Assessed performance at high luminance and doping concentrations.
  • 8NN-2B achieved a maximum EQE of 32.20% at 1000 cd m−2 luminance with negligible efficiency roll-off.
  • The intersystem crossing rate was increased to 7.7 × 10 5 s −1.
  • High efficiency maintained even at 10 wt% doping concentration due to suppressed molecular packing.

Abstract

ABSTRACT Developing multi‐resonance (MR) emitters to simultaneously achieve high external quantum efficiency (EQE), low efficiency roll‐off, and suppressed aggregation‐caused quenching and spectral broadening is critically important and challenging for advancing narrowband organic light‐emitting diodes. Herein, two emitters, 8NN‐1B and 8NN‐2B, are developed based on diaza‐octagon–containing emitting core (8NN) through the incorporation of multiple boron/nitrogen (B/N) units. Building upon the inherent MR characteristics and saddle‐shaped configuration of the 8NN matrix, the boron‐locked derivatives exhibit a markedly enhanced MR effect along with attractive aggregation‐induced emission and aggregation‐narrowed emission properties. Through rational regulation of electronic effects, their singlet‐triplet energy splitting values are significantly reduced, while the spatially twisted conformation for the diaza‐octagon heterocycle enhances spin–orbit coupling. Consequently, the reverse intersystem crossing rate in 8NN‐2B is boosted up to 7.7 × 10 5 s −1 , and its sensitizer‐free device achieves a high maximum EQE of 32.20% with negligible efficiency roll‐off at 1000 cd m −2 luminance. Notably, such high efficiency is well maintained even at a high doping concentration of 10 wt%, owing to suppressed molecular packing induced by the 8NN matrix. These results highlight a mutual modification strategy that exploits the complementary strengths of the diaza‐octagon core and BN framework for high‐performance narrowband emitters.

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Cite This Study

Qu et al. (2026) studied this question.

synapsesocial.com/papers/69fd7e5cbfa21ec5bbf0698ehttps://doi.org/10.1002/ange.3011418
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