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A polymer-memory device based on a copolymer containing carbazole (donor) and Eu-complex (acceptor) groups in a metal/insulator/metal architecture is described. The nonvolatile device has two distinctive bistable conductivity states, and exhibits a high ON/OFF current ratio, a fast response time, and acceptable retention under ambient conditions. Application of a potential sets the device to the high-conductivity ON state by generating holes (see Figure).
Ling et al. (2005) studied this question.