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In this work some aspects of embedded SAE by chemical beam epitaxy are shown. The anisotropy in growth behaviour between 0° and off-oriented substrates is discussed in terms of the chemical difference between A- and B-type steps. The presence of B steps is beneficial for the InP morphology; simultaneous presence of A steps gives rise to (110) facets, which lead to macro-step formation. From a B step up edge no new B steps are generated during growth, causing a macroscopic ripple pattern starting from this edge. The terrace lengths of these ripples are sensitive to growth conditions that influence surface mobility. Furthermore, the surface diffusion is clearly anisotropic with fast diffusion along 01̄1. The morphological features can be explained by assuming a (2 × 4) reconstruction during growth.
Katz et al. (1978) studied this question.