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Excellent device-to-device distribution was achieved in high-performance Ni/GeO x /TiO y /TaN resistive random access memory on low-cost flexible plastics, with low 30-μW switching power (9 μA at 3 V; - 1μA at -3 V), 10 5 cycling endurance, and good retention at 85 ° C. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.
Chou et al. (2013) studied this question.