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We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs-GaSb1−y Asy system. In addition, the tunneling probability is calculated across a barrier involving this system.
Sai-Halasz et al. (1977) studied this question.