Low-current-threshold and high-lasing uniformity GaAs–AlxGa1−xAs double-heterostructure lasers grown by molecular beam epitaxy

GaAs–AlxGa1−xAs double-heterostructure (DH) lasers that have current-threshold densities at least as low as similar-geometry DH lasers prepared by liquid-phase epitaxy have been prepared by molecular beam epitaxy for the first time. These broad-area lasers exhibited excellent stability and uniformity in lasing-filament distribution across the entire junction plane and throughout the entire current injection range up to catastrophic damage. The burn-off powers were typically about 14 W/mm. The differential quantum efficiencies were about 40%.