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February 1, 1973IEEE Journal of Quantum Electronics150 citations

Gain-current relation for GaAs lasers with n-type and undoped active layers

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FSF. Stern

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Abstract

Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers.

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F. Stern (1973) studied this question.

synapsesocial.com/papers/6a0e36b8af86e8b097c83f44https://doi.org/10.1109/jqe.1973.1077478
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