Electrical Modeling and Structural Parameter Optimization of Shielded Quad-Axis Differential Through-Silicon Vias

This paper proposes a novel shielded quad-axis differential through-silicon via (SQDTSV) structure. Initially, the parasitic parameters are extracted, and the applicability of the equivalent circuit model and analytical formulas is verified through a combined approach of HFSS simulations and MATLAB computations, leading to the establishment of an accurate equivalent circuit model. Subsequently, based on the single-variable principle, a systematic investigation is conducted to analyze the influence of multidimensional physical parameters—such as via height, signal conductor radius, and dielectric isolation thickness—on the transmission characteristics. An optimization model is then constructed via parameter sensitivity analysis. Simulation results demonstrate that, within the 0–100 GHz frequency band, the optimized SQDTSV structure has significantly improved performance across the entire frequency range. The differential-mode return loss has increased by more than 6.98 dB in the 50–100 GHz high-frequency band after optimization. In terms of transmission efficiency, the insertion loss in the low-frequency range (0–10 GHz) has decreased by more than 27%, and in the high-frequency range (10–100 GHz), it has decreased by over 11%, thereby significantly improving overall transmission performance.