High Responsivity, Broadband, and Fast Graphene/Silicon Photodetector in Photoconductor Mode

A fast-response photodetector is developed, which is highly photoresponsive and works over a broadband. It is fabricated using a combination of chemical vapor deposition graphene and silicon, together with the utilization of a lateral photoconductor operating mode. The photodetector exhibits high responsivities of ≈1.0 × 104 and ≈0.23 A W−1 in the visible (632 nm) and infrared regions (1550 nm), respectively. The response time is both below 3 μs in both spectral regions. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.