Conduction Band Minima in AlAs and AlSb

The photoresponse of surface barrier rectifiers made by evaporating a metal such as gold or platinum on a cleaved surface of AlAs and AlSb has been measured in the front wall configuration. The photoresponse of such units for hv > Eg, where Eg is the energy gap, will be proportional to the absorption coefficient as long as the optical attenuation length is large compared to both the width the space-charge region and the minority carrier length. The analysis is essentially same as that for p-n junctions with the exception the barrier is at the surface and hence sensitive to photons of high absorption coefficient. of carriers from the metal into the semiconductor for photon energies where hv < Eg can also be observed.