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September 7, 2018Nano Letters230 citations

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

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SPSock Mui PohSTSherman J. R. TanHWHan Wang

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Abstract

to be heteroepitaxially grown on graphene, thereby simplifying the fabrication of high-performance 2D ferroelectric junctions for ferroresistive memory applications.

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Poh et al. (2018) studied this question.

synapsesocial.com/papers/6a1d580973c56dd1bd2f8de4https://doi.org/10.1021/acs.nanolett.8b02688
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