Key points are not available for this paper at this time.
A number of experiments have recently appeared in the literature that extensively investigate the silicon-thickness dependence of the low-field carrier mobility in ultrathin-body silicon-on-insulator (SOI) MOSFETs. The aim of this paper is to develop a compact model, suited for implementation in device- simulation tools, which accurately predicts the low-field mobility in SOI single- and double-gate MOSFETs with Si thicknesses down to 2.48 nm. Such a model is still missing in the literature, despite its importance to predict the performance of present and future devices based on ultrathin silicon layers.
Reggiani et al. (2007) studied this question.