Randomized trial demonstrates reduced electron current in p-type SnO transistors, suggesting viability for high-temperature integration.
Key Points
This study aims to address the challenges faced by p-type SnO thin-film transistors during high-temperature processing for compatibility with back-end-of-line applications.
Introduced Pt(O)/Pt electrodes with Al2O3 interlayer for Schottky drain contacts.
Designed a submicrometer gate-to-drain gap to enhance electron depletion under negative bias.
Simulations were performed to investigate the impact of G-D gap on carrier distribution.
Successfully suppressed ambipolar channel conduction after annealing at 385 °C.
Reduced electron current by over three orders of magnitude without sacrificing p-type on-current.
Confirmed the effectiveness of the G-D gap modulation in electrostatic potential management.