PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
June 3, 2026IET conference proceedings.0 citations

Design of IGBT based on carrier storage layer

View Full Paper
RCRui-Sen ChenLCLi Chen

Key Points

  • The aim is to design a Trench IGBT with a carrier storage layer to improve performance characteristics.
  • Introduced the principle of the carrier storage layer in IGBT design.
  • Modified traditional IGBT structure to include a carrier storage layer and designed a corresponding termination structure.
  • Evaluated performance based on on-state voltage drop and breakdown voltage requirements.
  • Achieved a lower on-state voltage drop compared to conventional IGBTs.
  • Ensured the breakdown voltage met the specified requirements of the design.

Abstract

This paper presents the design of Trench Insulated Gate Bipolar Transistors (IGBT) based on 1200V platform. Firstly, the principle of carrier storage (CS) layer is introduced, an improvement was made on the traditional IGBT structure to design an IGBT with CS layer. IGBTs with CS layer has a lower on-state voltage drop compared to conventional IGBT. Additionally, the termination structure was designed and the breakdown voltage met the requirements.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Chen et al. (2026) studied this question.

synapsesocial.com/papers/6a1fc6cddee9eb8c0dce7b95https://doi.org/10.1049/icp.2026.1925
Ask AI
Helpful
Bookmark
Share
View Full Paper