Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

A 30×30 nm 2 HfO x resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 10 6 cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (R HIGH ) and low resistance (R LOW ) are proposed for the array to ensure a good operation window. A thin AlO x buffer layer under the HfO x layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program (PGM)/erase (ERS) disturb immunity.