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Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF₂) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current–voltage characteristics, due to the separated Ag or CaF₂ nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.
Wang et al. (2009) studied this question.